At this week’s 2017 International Electron Devices Meeting (IEDM), imec reports ultralow contact resistivity of 5×10-10Ωcm2 on gallium (Ga)-doped p-Germanium (Ge) source/drain contacts. The low contact resistivity and high level of Ga activation were achieved after nanosecond laser activation (NLA) at low thermal budget.   The results show that highly Ga-doped Ge-rich source/drain contacts provide a promising route for suppressing parasitic source/drain resistance in advanced pMOS devices...